Shanghai "nonvolatile memory" among the international advanced level study

Nonvolatile memory" as a new generation of internationally recognized storage technology, more and more attention around the world. 7 held in Shanghai from the Eleventh International Conference on non-volatile memory was informed, Shanghai research in this area has among the international advanced level.
       Compared with the volatile memory, nonvolatile memory with high-speed, high-density, miniature, low power, radiation, able to maintain data even after power failure, and many other advantages. With technology development, non-volatile memory is divided into phase-change memory, magnetic memory, resistive memory, ferroelectric memory, and many other types. Shanghai Institute of Microsystem, SMIC, micro-chip is a combination of production and research team has been working on our own phase-change memory chips and storage products.

       According to the Shanghai Institute of Microsystem Song Zhitang researcher from Shanghai Institute of Microsystem, SMIC and micro-chip joint research team consisting of phase-change memory chips has been studied engineering breakthrough developed 8Mb test chip, and to achieve full storage, 8-inch full-chip Bit excellent rate of over 99%, develop a self-dual channel IP-blocking diode array, a successful technology integration and demonstration of related functions, and the establishment of 8-inch full-chip test system.

       On this basis, Shanghai Institute of Microsystem and SMIC set up a 12 inch, special PCRAM platform. 12 inches 40 nm phase-change memory key technology industry has also made important progress, completed the first version of the chip design and process development into the key; initially completed the size of 60-70 nm phase change material filling and polishing , etching single process development.

       Eleventh International Symposium on non-volatile memory by the International Institute of Electrical and Electronics Engineers, organized Shanghai Institute of Microsystem and Information Technology Institute and the Singapore Data Storage Institute to co-host, is an international non-volatile memory area for the first time in China held the authority of the meeting. From the United States, France, Germany, Spain, Russia, 10 countries and regions, more than 200 scholars and industry experts attended the meeting. In the three-day conference will be held during the 10 games of the General Assembly reports and exchange of reports, non-volatile memory area around the latest developments in academic exchanges and discussions.