Toshiba Electronics has packaged its trench-based mosfets in a smaller DPAK+ package technology for motor control and automotive applications.
Based on Toshiba’s ‘WARP’ technology, DPAK+ replaces conventional internal aluminium bondwires between the mosfet die and the package leads with wider copper clamps.
“The clamping mechanism maintains a highly reliable mechanical connection capable of withstanding repeated power cycling as well as exposure to shock and vibration,” said the supplier.
There is a larger cross-sectional area which helps to minimise I2R heating due to package losses and reduces package inductance.
“This, in turn, contributes to heat reduction, lower noise and faster device operation,” said Toshiba.
The mosfets have an on resistances as low as 2.4mΩ (typical, VGS = 10V).
Typical thermal resistance between channel and case is 1.5º/W, while power dissipation at 25ºC is 100W.
There are 11 n-channel devices in the range with voltage ratings of 40V, 60V and 100V. There are also 10 p-channel parts with maximum voltage ratings of -40V and -60V.
Current ratings range from ±8A to ±80A depending on the device chosen.
The mosfets are designed to operate in automotive environments with channel temperatures of up to 175ºC.
The DPAK+ package is pin-to-pin compatible with a conventional DPAK package.
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